IXTA200N055T2 IXYS
Виробник: IXYSDescription: MOSFET N-CH 55V 200A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 274.43 грн |
| 50+ | 209.74 грн |
| 100+ | 179.78 грн |
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Технічний опис IXTA200N055T2 IXYS
Description: MOSFET N-CH 55V 200A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V.
Інші пропозиції IXTA200N055T2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IXTA200N055T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns Case: TO263 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 360W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Kind of channel: enhanced Mounting: SMD Reverse recovery time: 49ns Drain-source voltage: 55V Drain current: 200A On-state resistance: 4.2mΩ кількість в упаковці: 1 шт |
товар відсутній |
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IXTA200N055T2 | Виробник : IXYS |
MOSFET 200 Amps 55V 0.0042 Rds |
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IXTA200N055T2 | Виробник : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns Case: TO263 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 360W Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Gate charge: 109nC Kind of channel: enhanced Mounting: SMD Reverse recovery time: 49ns Drain-source voltage: 55V Drain current: 200A On-state resistance: 4.2mΩ |
товар відсутній |