IXTA220N04T2

IXTA220N04T2 Littelfuse


mosfets_n-channel_trench_gate_ixt_220n04t2_datasheet.pdf.pdf Виробник: Littelfuse
Trans MOSFET N-CH 40V 220A Automotive 3-Pin(2+Tab) D2PAK
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Технічний опис IXTA220N04T2 Littelfuse

Description: MOSFET N-CH 40V 220A TO-263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V.

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IXTA220N04T2 IXTA220N04T2 Виробник : IXYS IXTA(P)220N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
кількість в упаковці: 1 шт
товар відсутній
IXTA220N04T2 IXTA220N04T2 Виробник : Littelfuse mosfets_n-channel_trench_gate_ixt_220n04t2_datasheet.pdf.pdf Trans MOSFET N-CH 40V 220A 3-Pin(2+Tab) D2PAK
товар відсутній
IXTA220N04T2 IXTA220N04T2 Виробник : IXYS 99918B.pdf Description: MOSFET N-CH 40V 220A TO-263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 25 V
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IXTA220N04T2 IXTA220N04T2 Виробник : IXYS ixys_s_a0006130912_1-2272792.pdf MOSFET 220 Amps 40V 0.0035 Rds
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IXTA220N04T2 IXTA220N04T2 Виробник : IXYS IXTA(P)220N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 45ns
товар відсутній