на замовлення 1439 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 641.02 грн |
| 10+ | 541.27 грн |
| 50+ | 379.87 грн |
| 100+ | 357.17 грн |
| 250+ | 354.5 грн |
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Технічний опис IXTA32P20T IXYS
Description: MOSFET P-CH 200V 32A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V.
Інші пропозиції IXTA32P20T
| Фото | Назва | Виробник | Інформація |
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IXTA32P20T | Виробник : Littelfuse |
 Trans MOSFET P-CH 200V 32A 3-Pin(2+Tab) D2PAK |
товар відсутній |
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IXTA32P20T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -32A Power dissipation: 300W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 190ns кількість в упаковці: 1 шт |
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IXTA32P20T | Виробник : IXYS |
Description: MOSFET P-CH 200V 32A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 16A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 25 V |
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IXTA32P20T | Виробник : IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -32A Power dissipation: 300W Case: TO263 Gate-source voltage: ±15V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 185nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 190ns |
товар відсутній |