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IXTA6N100D2-TRL Littelfuse


mosfets_n-channel_depletion_mode_ixt_6n100_datasheet.pdf.pdf Виробник: Littelfuse
Trans MOSFET N-CH 1KV 3-Pin(2+Tab) D2PAK T/R
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Технічний опис IXTA6N100D2-TRL Littelfuse

Description: MOSFET N-CH 1000V 6A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tj), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V.

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IXTA6N100D2-TRL IXTA6N100D2-TRL Виробник : IXYS Description: MOSFET N-CH 1000V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
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IXTA6N100D2-TRL IXTA6N100D2-TRL Виробник : IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mo-1622610.pdf MOSFET IXTA6N100D2 TRL
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