IXXH40N65B4D1 IXYS
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
кількість в упаковці: 1 шт
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Технічний опис IXXH40N65B4D1 IXYS
Description: IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/115ns, Switching Energy: 1.4mJ (on), 800µJ (off), Test Condition: 400V, 40A, 5Ohm, 15V, Gate Charge: 66 nC, Current - Collector (Ic) (Max): 115 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 455 W.
Інші пропозиції IXXH40N65B4D1
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXXH40N65B4D1 | Виробник : IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/115ns Switching Energy: 1.4mJ (on), 800µJ (off) Test Condition: 400V, 40A, 5Ohm, 15V Gate Charge: 66 nC Current - Collector (Ic) (Max): 115 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 455 W |
товар відсутній |
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IXXH40N65B4D1 | Виробник : IXYS | IGBT Transistors Disc IGBT XPT-GenX4 TO-247AD |
товар відсутній |
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IXXH40N65B4D1 | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 455W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 66nC Kind of package: tube Turn-on time: 67ns Turn-off time: 252ns |
товар відсутній |