Технічний опис IXYA8N90C3D1 IXYS
Description: IGBT 900V 20A 125W C3 TO-263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 114 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A, Supplier Device Package: TO-263AA, Td (on/off) @ 25°C: 16ns/40ns, Switching Energy: 460µJ (on), 180µJ (off), Test Condition: 450V, 8A, 30Ohm, 15V, Gate Charge: 13.3 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 48 A, Power - Max: 125 W.
Інші пропозиції IXYA8N90C3D1
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IXYA8N90C3D1 | Виробник : IXYS |
 Description: IGBT 900V 20A 125W C3 TO-263AAPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 16ns/40ns Switching Energy: 460µJ (on), 180µJ (off) Test Condition: 450V, 8A, 30Ohm, 15V Gate Charge: 13.3 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 900 V Current - Collector Pulsed (Icm): 48 A Power - Max: 125 W |
товар відсутній |
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IXYA8N90C3D1 | Виробник : IXYS |
IGBT Transistors 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode |
товар відсутній |