IXYH16N250C IXYS
Виробник: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 2.5kV
Collector current: 16A
Power dissipation: 500W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 64A
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Turn-on time: 14ns
Turn-off time: 260ns
Features of semiconductor devices: high voltage
кількість в упаковці: 1 шт
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Технічний опис IXYH16N250C IXYS
Description: IGBT 2500V 35A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 19 ns, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 14ns/260ns, Switching Energy: 4.75mJ (on), 3.9mJ (off), Test Condition: 1250V, 16A, 10Ohm, 15V, Gate Charge: 97 nC, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 2500 V, Current - Collector Pulsed (Icm): 126 A, Power - Max: 500 W.
Інші пропозиції IXYH16N250C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IXYH16N250C | Виробник : IXYS |
Description: IGBT 2500V 35A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 19 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 16A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 14ns/260ns Switching Energy: 4.75mJ (on), 3.9mJ (off) Test Condition: 1250V, 16A, 10Ohm, 15V Gate Charge: 97 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 126 A Power - Max: 500 W |
товар відсутній |
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| IXYH16N250C | Виробник : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 2.5kV; 16A; 500W; TO247-3 Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 2.5kV Collector current: 16A Power dissipation: 500W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 64A Mounting: THT Gate charge: 97nC Kind of package: tube Turn-on time: 14ns Turn-off time: 260ns Features of semiconductor devices: high voltage |
товар відсутній |