IXYP24N100A4 IXYS
Виробник: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
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Технічний опис IXYP24N100A4 IXYS
Description: IGBT DISCRETE TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 47 ns, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A, Supplier Device Package: TO-220 (IXYP), IGBT Type: PT, Td (on/off) @ 25°C: 13ns/216ns, Switching Energy: 3.5mJ (on), 2.3mJ (off), Test Condition: 800V, 24A, 10Ohm, 15V, Gate Charge: 44 nC, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Current - Collector Pulsed (Icm): 145 A, Power - Max: 375 W.
Інші пропозиції IXYP24N100A4
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
IXYP24N100A4 | Виробник : IXYS | IGBT Transistors IGBT DISCRETE |
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