Технічний опис IXYX200N65B3 IXYS
Description: IGBT, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 108 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 60ns/370ns, Switching Energy: 5mJ (on), 4mJ (off), Test Condition: 400V, 100A, 0Ohm, 15V, Gate Charge: 340 nC, Current - Collector (Ic) (Max): 410 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 1100 A, Power - Max: 1560 W.
Інші пропозиції IXYX200N65B3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IXYX200N65B3 | Виробник : IXYS |
 Description: IGBTPackaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 108 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 60ns/370ns Switching Energy: 5mJ (on), 4mJ (off) Test Condition: 400V, 100A, 0Ohm, 15V Gate Charge: 340 nC Current - Collector (Ic) (Max): 410 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1100 A Power - Max: 1560 W |
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| IXYX200N65B3 | Виробник : IXYS |
IGBT Transistors IGBT DISCRETE |
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