LGD8201TH LITTELFUSE
Виробник: LITTELFUSE
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 400V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 125W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Mounting: SMD
Case: DPAK
кількість в упаковці: 2500 шт
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems
Application: ignition systems
Collector-emitter voltage: 400V
Gate-emitter voltage: ±15V
Collector current: 20A
Pulsed collector current: 50A
Type of transistor: IGBT
Power dissipation: 125W
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Mounting: SMD
Case: DPAK
кількість в упаковці: 2500 шт
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Технічний опис LGD8201TH LITTELFUSE
Category: SMD IGBT transistors, Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems, Application: ignition systems, Collector-emitter voltage: 400V, Gate-emitter voltage: ±15V, Collector current: 20A, Pulsed collector current: 50A, Type of transistor: IGBT, Power dissipation: 125W, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate; logic level, Mounting: SMD, Case: DPAK, кількість в упаковці: 2500 шт.
Інші пропозиції LGD8201TH
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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LGD8201TH | Виробник : IXYS |
Description: DPAK, IGBT3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 50 A Power - Max: 125 W |
товар відсутній |
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LGD8201TH | Виробник : LITTELFUSE |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 20A; 125W; DPAK; ignition systems Application: ignition systems Collector-emitter voltage: 400V Gate-emitter voltage: ±15V Collector current: 20A Pulsed collector current: 50A Type of transistor: IGBT Power dissipation: 125W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Mounting: SMD Case: DPAK |
товар відсутній |