LSIC1MO120T0080-TU LITTELFUSE
Виробник: LITTELFUSE
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; TO263-7
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 95nC
Technology: SiC
Kind of channel: enhanced
Mounting: SMD
Case: TO263-7
Drain-source voltage: 1.2kV
Drain current: 39A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; TO263-7
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 95nC
Technology: SiC
Kind of channel: enhanced
Mounting: SMD
Case: TO263-7
Drain-source voltage: 1.2kV
Drain current: 39A
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
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Технічний опис LSIC1MO120T0080-TU LITTELFUSE
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; TO263-7, Polarisation: unipolar, Kind of package: tube, Features of semiconductor devices: Kelvin terminal, Gate charge: 95nC, Technology: SiC, Kind of channel: enhanced, Mounting: SMD, Case: TO263-7, Drain-source voltage: 1.2kV, Drain current: 39A, On-state resistance: 80mΩ, Type of transistor: N-MOSFET, кількість в упаковці: 1 шт.
Інші пропозиції LSIC1MO120T0080-TU
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LSIC1MO120T0080-TU | Виробник : LITTELFUSE |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; TO263-7 Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 95nC Technology: SiC Kind of channel: enhanced Mounting: SMD Case: TO263-7 Drain-source voltage: 1.2kV Drain current: 39A On-state resistance: 80mΩ Type of transistor: N-MOSFET |
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