LSIC2SD065C08A Littelfuse Inc.
Виробник: Littelfuse Inc.Description: DIODE SIL CARB 650V 23A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 415pF @ 1V, 1MHz
Current - Average Rectified (Io): 23A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
на замовлення 2298 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 303.23 грн |
| 10+ | 245.22 грн |
| 100+ | 198.38 грн |
| 500+ | 165.48 грн |
| 1000+ | 141.69 грн |
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Технічний опис LSIC2SD065C08A Littelfuse Inc.
Description: DIODE SIL CARB 650V 23A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 415pF @ 1V, 1MHz, Current - Average Rectified (Io): 23A, Supplier Device Package: TO-252 (DPAK), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A, Current - Reverse Leakage @ Vr: 50 µA @ 650 V.
Інші пропозиції LSIC2SD065C08A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| LSIC2SD065C08A | Виробник : Littelfuse |
650V/8A SiC SBD TO252-2L AEC-Q101 |
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LSIC2SD065C08A | Виробник : LITTELFUSE |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO252; 38W; LSIC2SD Application: automotive industry Manufacturer series: LSIC2SD Max. forward impulse current: 40A Max. off-state voltage: 650V Power dissipation: 38W Case: TO252 Type of diode: Schottky rectifying Mounting: SMD Technology: SiC Max. forward voltage: 1.85V Load current: 8A Semiconductor structure: single diode кількість в упаковці: 2500 шт |
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LSIC2SD065C08A | Виробник : Littelfuse Inc. |
Description: DIODE SIL CARB 650V 23A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 415pF @ 1V, 1MHz Current - Average Rectified (Io): 23A Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 650 V |
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LSIC2SD065C08A | Виробник : Littelfuse |
Schottky Diodes & Rectifiers 650V 8A TO-252-2L SiC Schottky Diode |
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LSIC2SD065C08A | Виробник : LITTELFUSE |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO252; 38W; LSIC2SD Application: automotive industry Manufacturer series: LSIC2SD Max. forward impulse current: 40A Max. off-state voltage: 650V Power dissipation: 38W Case: TO252 Type of diode: Schottky rectifying Mounting: SMD Technology: SiC Max. forward voltage: 1.85V Load current: 8A Semiconductor structure: single diode |
товар відсутній |