MCB110P06Y-TP Micro Commercial Co
Виробник: Micro Commercial CoDescription: P-CHANNEL MOSFET,D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5810 pF @ 30 V
на замовлення 695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.61 грн |
| 10+ | 219.41 грн |
| 100+ | 177.5 грн |
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Технічний опис MCB110P06Y-TP Micro Commercial Co
Description: P-CHANNEL MOSFET,D2-PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V, Power Dissipation (Max): 125W, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5810 pF @ 30 V.
Інші пропозиції MCB110P06Y-TP
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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MCB110P06Y-TP | Виробник : Micro Commercial Components |
N-Channel MOSFET |
товар відсутній |
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MCB110P06Y-TP | Виробник : Micro Commercial Co |
Description: P-CHANNEL MOSFET,D2-PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V Power Dissipation (Max): 125W Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5810 pF @ 30 V |
товар відсутній |