Технічний опис MDD810-12N2 IXYS
Description: DIODE MODULE GP 1200V 807A, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 16.5 µs, Technology: Standard, Diode Configuration: 1 Pair Series Connection, Current - Average Rectified (Io) (per Diode): 807A, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A, Current - Reverse Leakage @ Vr: 50 mA @ 1200 V.
Інші пропозиції MDD810-12N2
| Фото | Назва | Виробник | Інформація |
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| MDD810-12N2 | Виробник : IXYS |
 Description: DIODE MODULE GP 1200V 807APackaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 16.5 µs Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 807A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A Current - Reverse Leakage @ Vr: 50 mA @ 1200 V |
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MDD810-12N2 | Виробник : IXYS |
Discrete Semiconductor Modules HIGH POWER MODULE |
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