NE3515S02-T1C-A Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 88mA
Frequency: 12GHz
Power - Output: 14dBm
Gain: 12.5dB
Technology: HFET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Current Rating (Amps): 88mA
Frequency: 12GHz
Power - Output: 14dBm
Gain: 12.5dB
Technology: HFET
Noise Figure: 0.3dB
Supplier Device Package: S02
Voltage - Rated: 4 V
Voltage - Test: 2 V
Current - Test: 10 mA
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Технічний опис NE3515S02-T1C-A Renesas Electronics America Inc
Description: SMALL SIGNAL N-CHANNEL MOSFET, Packaging: Bulk, Package / Case: 4-SMD, Flat Leads, Current Rating (Amps): 88mA, Frequency: 12GHz, Power - Output: 14dBm, Gain: 12.5dB, Technology: HFET, Noise Figure: 0.3dB, Supplier Device Package: S02, Voltage - Rated: 4 V, Voltage - Test: 2 V, Current - Test: 10 mA.
Інші пропозиції NE3515S02-T1C-A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
NE3515S02-T1C-A | Виробник : CEL |
 RF JFET Transistors Super Low Noise Pseudomorphic |
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