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NGTB40N120IHLWG ON Semiconductor

Виробник: ON Semiconductor
Trans IGBT Chip N-CH 1200V 80A 260000mW 3-Pin(3+Tab) TO-247 Tube

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Технічний опис NGTB40N120IHLWG ON Semiconductor

Description: IGBT 1200V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/360ns, Switching Energy: 1.4mJ (off), Test Condition: 600V, 40A, 10Ohm, 15V, Gate Charge: 420 nC, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 320 A, Power - Max: 260 W.

Інші пропозиції NGTB40N120IHLWG

Фото	Назва	Виробник	Інформація	Доступність	Ціна без ПДВ
	NGTB40N120IHLWG	Виробник : onsemi	Description: IGBT 1200V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/360ns Switching Energy: 1.4mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 420 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 320 A Power - Max: 260 W	товар відсутній