NP160N055TUK-E1-AY Renesas Electronics America Inc
Виробник: Renesas Electronics America IncDescription: MOSFET N-CH 55V 160A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
на замовлення 740 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 324.07 грн |
| 10+ | 280.03 грн |
| 100+ | 229.41 грн |
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Технічний опис NP160N055TUK-E1-AY Renesas Electronics America Inc
Description: MOSFET N-CH 55V 160A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V, Power Dissipation (Max): 1.8W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V.
Інші пропозиції NP160N055TUK-E1-AY
| Фото | Назва | Виробник | Інформація |
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NP160N055TUK-E1-AY | Виробник : Renesas Electronics America Inc |
Description: MOSFET N-CH 55V 160A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V Power Dissipation (Max): 1.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V |
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NP160N055TUK-E1-AY | Виробник : Renesas Electronics |
MOSFET LOW VOLTAGE POWER MOSFET |
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