NXH50C120L2C2ES1G onsemi
Виробник: onsemi
Description: IGBT MOD 1200V 50A 26DIP
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V
Description: IGBT MOD 1200V 50A 26DIP
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 6609.21 грн |
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Технічний опис NXH50C120L2C2ES1G onsemi
Description: IGBT MOD 1200V 50A 26DIP, Packaging: Tube, Package / Case: 26-PowerDIP Module (1.199", 47.20mm), Mounting Type: Through Hole, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: 26-DIP, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 250 µA, Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V.
Інші пропозиції NXH50C120L2C2ES1G за ціною від 5537.92 грн до 7778.35 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NXH50C120L2C2ES1G | Виробник : onsemi |
 IGBT Modules TMPIM 1200V 50A CI |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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NXH50C120L2C2ES1G | Виробник : ON Semiconductor |
Trans IGBT Module N-CH 1200V 50A 20mW 26-Pin DIP Tube |
товар відсутній |
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| NXH50C120L2C2ES1G | Виробник : onsemi |
Description: IGBT MOD 1200V 50A 26DIP Packaging: Tube Package / Case: 26-PowerDIP Module (1.199", 47.20mm) Mounting Type: Through Hole Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter with Brake Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: 26-DIP Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 11.89 nF @ 20 V |
товар відсутній |