Технічний опис NXV08H250DT1 ON Semiconductor
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA, Packaging: Tube, Package / Case: 17-PowerDIP Module (1.390", 35.30mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V, Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V, Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V, Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: APM17-MDC, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NXV08H250DT1
Фото | Назва | Виробник | Інформація |
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NXV08H250DT1 | Виробник : onsemi |
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA Packaging: Tube Package / Case: 17-PowerDIP Module (1.390", 35.30mm) Mounting Type: Through Hole Configuration: 4 N-Channel Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V Vgs(th) (Max) @ Id: 4.6V @ 1mA Supplier Device Package: APM17-MDC Grade: Automotive Qualification: AEC-Q101 |
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NXV08H250DT1 | Виробник : onsemi | Discrete Semiconductor Modules APM17-MDC, MV7 80V, AL2O3, 2 PHASE |
товар відсутній |