Технічний опис P2N2222AG ON Semiconductor
Description: TRANS NPN 40V 0.6A TO92, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 Long Body, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Current - Collector Cutoff (Max): 10nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 300MHz, Supplier Device Package: TO-92 (TO-226), Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 625 mW.
Інші пропозиції P2N2222AG
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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P2N2222AG | Виробник : ON Semiconductor |
 Trans GP BJT NPN 40V 0.6A 625mW 3-Pin TO-92 Box |
товар відсутній |
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P2N2222AG | Виробник : onsemi |
Description: TRANS NPN 40V 0.6A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товар відсутній |
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P2N2222AG | Виробник : onsemi |
Bipolar Transistors - BJT 600mA 75V NPN |
товар відсутній |