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PJMD600N65E1_L2_00001

PJMD600N65E1_L2_00001 PanJit Semiconductor


Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.3A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
кількість в упаковці: 3000 шт
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Технічний опис PJMD600N65E1_L2_00001 PanJit Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA, Case: TO252AA, Mounting: SMD, Kind of package: reel; tape, Drain current: 7.3A, On-state resistance: 0.6Ω, Type of transistor: N-MOSFET, Power dissipation: 54W, Polarisation: unipolar, Gate charge: 17nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 21.9A, Drain-source voltage: 650V, кількість в упаковці: 3000 шт.

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PJMD600N65E1_L2_00001 PJMD600N65E1_L2_00001 Виробник : PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.3A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
товар відсутній