PJMP990N65EC_T0_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 132.93 грн |
10+ | 106.35 грн |
100+ | 84.66 грн |
500+ | 67.23 грн |
1000+ | 57.04 грн |
2000+ | 54.19 грн |
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Технічний опис PJMP990N65EC_T0_00001 Panjit International Inc.
Description: 650V SUPER JUNCITON MOSFET, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V, Power Dissipation (Max): 47.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB-L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V.
Інші пропозиції PJMP990N65EC_T0_00001 за ціною від 52.41 грн до 140.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PJMP990N65EC_T0_00001 | Виробник : Panjit | MOSFET 650V/ 990mohm Super Junction Easy version Gen.1.5 |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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PJMP990N65EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 9.5A Mounting: THT Case: TO220ABL Drain-source voltage: 650V Drain current: 4.7A On-state resistance: 990mΩ Type of transistor: N-MOSFET Power dissipation: 47.5W Polarisation: unipolar Kind of package: tube кількість в упаковці: 1 шт |
товар відсутній |
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PJMP990N65EC_T0_00001 | Виробник : PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W Gate charge: 9.7nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 9.5A Mounting: THT Case: TO220ABL Drain-source voltage: 650V Drain current: 4.7A On-state resistance: 990mΩ Type of transistor: N-MOSFET Power dissipation: 47.5W Polarisation: unipolar Kind of package: tube |
товар відсутній |