на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 159+ | 73.37 грн |
| 167+ | 70.09 грн |
| 250+ | 67.28 грн |
| 500+ | 62.53 грн |
| 1000+ | 56.02 грн |
| 2500+ | 52.18 грн |
Відгуки про товар
Написати відгук
Технічний опис QS8J5TR Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A TSMT8, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A, Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V, Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT8, Part Status: Not For New Designs.
Інші пропозиції QS8J5TR за ціною від 38.33 грн до 110.82 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
QS8J5TR | Виробник : Rohm Semiconductor |
 Description: MOSFET 2P-CH 30V 5A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
на замовлення 2567 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
QS8J5TR | Виробник : ROHM Semiconductor |
MOSFET TRANS MOSFET PCH 30V 5A 8PIN |
на замовлення 2874 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
| QS8J5TR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||||
|
|
QS8J5TR | Виробник : Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Not For New Designs |
товар відсутній |
|||||||||||||||||
| QS8J5TR | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |