RCX511N25 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 250V 51A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
на замовлення 605 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.63 грн |
| 10+ | 163.57 грн |
| 100+ | 132.3 грн |
| 500+ | 110.37 грн |
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Технічний опис RCX511N25 Rohm Semiconductor
Description: MOSFET N-CH 250V 51A TO220FM, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 25.5A, 10V, Power Dissipation (Max): 2.23W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V.
Інші пропозиції RCX511N25
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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RCX511N25 | Виробник : ROHM Semiconductor |
MOSFET 10V Drive Nch MOSFET |
на замовлення 176 шт: термін постачання 21-30 дні (днів) |
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| RCX511N25 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 51A Pulsed drain current: 204A Power dissipation: 84W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| RCX511N25 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 204A; 84W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 51A Pulsed drain current: 204A Power dissipation: 84W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
товар відсутній |