Технічний опис RGL41M-E3/97 Vishay
Description: DIODE GEN PURP 1KV 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Інші пропозиції RGL41M-E3/97
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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RGL41M-E3/97 | Виробник : Vishay |
 Diode Switching 1KV 1A 2-Pin DO-213AB T/R |
товар відсутній |
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RGL41M-E3/97 | Виробник : Vishay |
Diode Switching 1KV 1A 2-Pin DO-213AB T/R |
товар відсутній |
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RGL41M-E3/97 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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RGL41M-E3/97 | Виробник : Vishay General Semiconductor |
Rectifiers 1 Amp 1000Volt 500ns |
товар відсутній |