RGT16BM65DTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: IGBT TRENCH FIELD 650V 16A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
Supplier Device Package: TO-252
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/33ns
Test Condition: 400V, 8A, 10Ohm, 15V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 94 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 62.92 грн |
| 5000+ | 58.32 грн |
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Технічний опис RGT16BM65DTL Rohm Semiconductor
Description: IGBT TRENCH FIELD 650V 16A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A, Supplier Device Package: TO-252, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 13ns/33ns, Test Condition: 400V, 8A, 10Ohm, 15V, Gate Charge: 21 nC, Part Status: Active, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 94 W.
Інші пропозиції RGT16BM65DTL за ціною від 58.59 грн до 151.12 грн
| Фото | Назва | Виробник | Інформація |
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RGT16BM65DTL | Виробник : Rohm Semiconductor |
Description: IGBT TRENCH FIELD 650V 16A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A Supplier Device Package: TO-252 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 13ns/33ns Test Condition: 400V, 8A, 10Ohm, 15V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 24 A Power - Max: 94 W |
на замовлення 9611 шт: термін постачання 21-31 дні (днів) |
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RGT16BM65DTL | Виробник : ROHM Semiconductor |
IGBT Transistors ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
на замовлення 6152 шт: термін постачання 21-30 дні (днів) |
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| RGT16BM65DTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO252 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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| RGT16BM65DTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 8A; 47W; TO252 Mounting: SMD Pulsed collector current: 24A Type of transistor: IGBT Turn-on time: 27ns Kind of package: reel; tape Case: TO252 Turn-off time: 170ns Gate-emitter voltage: ±30V Collector current: 8A Collector-emitter voltage: 650V Power dissipation: 47W Gate charge: 21nC Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |