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RGW50NL65HRBTL

RGW50NL65HRBTL ROHM Semiconductor

datasheet?p=RGW50NL65HRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Виробник: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 25A, LPDL, Field Stop Trench IGBT for Automotive: RGW50NL65HRB is a IGBT with low collector - emitter saturation voltage, suitable for On & Off Board Chagers, DC-DC Converters, PFC, Industrial Inverter
на замовлення 2000 шт:
термін постачання 122-131 дні (днів)
Кількість Ціна без ПДВ
2+237.14 грн
10+ 196.32 грн
25+ 161.41 грн
100+ 137.5 грн
250+ 130.19 грн
500+ 122.22 грн
1000+ 101.63 грн
Мінімальне замовлення: 2
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Технічний опис RGW50NL65HRBTL ROHM Semiconductor

Description: HIGH-SPEED FAST SWITCHING TYPE,, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A, Supplier Device Package: TO-263L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/119ns, Switching Energy: 110µJ (on), 230µJ (off), Test Condition: 400V, 12.5A, 10Ohm, 15V, Gate Charge: 73 nC, Grade: Automotive, Current - Collector (Ic) (Max): 57 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 165 W, Qualification: AEC-Q101.

Інші пропозиції RGW50NL65HRBTL

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Ціна без ПДВ
RGW50NL65HRBTL RGW50NL65HRBTL Виробник : Rohm Semiconductor datasheet?p=RGW50NL65HRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: HIGH-SPEED FAST SWITCHING TYPE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
товар відсутній
RGW50NL65HRBTL RGW50NL65HRBTL Виробник : Rohm Semiconductor datasheet?p=RGW50NL65HRB&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Description: HIGH-SPEED FAST SWITCHING TYPE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/119ns
Switching Energy: 110µJ (on), 230µJ (off)
Test Condition: 400V, 12.5A, 10Ohm, 15V
Gate Charge: 73 nC
Grade: Automotive
Current - Collector (Ic) (Max): 57 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 165 W
Qualification: AEC-Q101
товар відсутній