RSR025N03HZGTL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.96 грн |
| 10+ | 33.7 грн |
| 100+ | 23.42 грн |
| 500+ | 17.16 грн |
| 1000+ | 13.95 грн |
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Технічний опис RSR025N03HZGTL Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції RSR025N03HZGTL за ціною від 11.89 грн до 43.94 грн
| Фото | Назва | Виробник | Інформація |
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RSR025N03HZGTL | Виробник : ROHM Semiconductor |
MOSFET Automotive Nch 30V 2.5A Small Signal MOSFET. RSR025N03HZG is a MOSFET with low on - resistance, suitable for switching. |
на замовлення 5867 шт: термін постачання 196-205 дні (днів) |
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| RSR025N03HZGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.118Ω Type of transistor: N-MOSFET Power dissipation: 1W кількість в упаковці: 1 шт |
товар відсутній |
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RSR025N03HZGTL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V Qualification: AEC-Q101 |
товар відсутній |
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| RSR025N03HZGTL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Mounting: SMD Case: TSMT3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 2.9nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A On-state resistance: 0.118Ω Type of transistor: N-MOSFET Power dissipation: 1W |
товар відсутній |