RTF025N03FRATL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 30V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6407 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.9 грн |
| 13+ | 23.04 грн |
| 100+ | 13.8 грн |
| 500+ | 11.99 грн |
| 1000+ | 8.15 грн |
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Технічний опис RTF025N03FRATL Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції RTF025N03FRATL за ціною від 6.64 грн до 33.87 грн
| Фото | Назва | Виробник | Інформація |
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RTF025N03FRATL | Виробник : ROHM Semiconductor |
MOSFET Nch 30V Vds 2.5A 0.07Rds(on) 3.7Qg |
на замовлення 34076 шт: термін постачання 21-30 дні (днів) |
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| RTF025N03FRATL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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RTF025N03FRATL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 30V 2.5A TUMT3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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| RTF025N03FRATL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |