SCT3105KRC14 Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: SICFET N-CH 1200V 24A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
Power Dissipation (Max): 134W
Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
на замовлення 102 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1463.21 грн |
| 30+ | 1140.44 грн |
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Технічний опис SCT3105KRC14 Rohm Semiconductor
Description: SICFET N-CH 1200V 24A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V, Power Dissipation (Max): 134W, Vgs(th) (Max) @ Id: 5.6V @ 3.81mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V.
Інші пропозиції SCT3105KRC14 за ціною від 926.85 грн до 1566.83 грн
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SCT3105KRC14 | Виробник : ROHM Semiconductor |
MOSFET 1200V Nch SiC Trench MOSFET in 4pin Package - SCT3105KR is a trench gate structure SiC MOSFET ideal for server power supplies, solar inverters, and electric vehicle charging stations. A 4pin package that separates the power source terminal and driv |
на замовлення 97 шт: термін постачання 21-30 дні (днів) |
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| SCT3105KRC14 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Mounting: THT Kind of package: tube Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 60A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 137mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| SCT3105KRC14 | Виробник : ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; Idm: 60A; 134W Mounting: THT Kind of package: tube Power dissipation: 134W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 51nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -4...22V Pulsed drain current: 60A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 24A On-state resistance: 137mΩ Type of transistor: N-MOSFET |
товар відсутній |