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SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS


SEMIX302GAL12E4S.pdf Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Case: SEMIX2S
Topology: boost chopper; thermistor
Semiconductor structure: diode/transistor
кількість в упаковці: 1 шт
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Технічний опис SEMIX302GAL12E4S 27890220 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw, Application: for UPS; frequency changer; Inverter; photovoltaics, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit; screw, Mechanical mounting: screw, Type of module: IGBT, Case: SEMIX2S, Topology: boost chopper; thermistor, Semiconductor structure: diode/transistor, кількість в упаковці: 1 шт.

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SEMIX302GAL12E4S 27890220 Виробник : SEMIKRON DANFOSS SEMIX302GAL12E4S.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,thermistor; screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit; screw
Mechanical mounting: screw
Type of module: IGBT
Case: SEMIX2S
Topology: boost chopper; thermistor
Semiconductor structure: diode/transistor
товар відсутній