SEMIX303GB12E4P 27895007 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; thermistor
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: SEMiX® 3p
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 900A
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис SEMIX303GB12E4P 27895007 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Type of module: IGBT, Semiconductor structure: transistor/transistor, Topology: IGBT half-bridge; thermistor, Max. off-state voltage: 1.2kV, Collector current: 300A, Case: SEMiX® 3p, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 900A, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції SEMIX303GB12E4P 27895007
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SEMIX303GB12E4P 27895007 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; thermistor Max. off-state voltage: 1.2kV Collector current: 300A Case: SEMiX® 3p Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 900A Mechanical mounting: screw |
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