SF35G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1250+ | 14.45 грн |
2500+ | 12.44 грн |
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Технічний опис SF35G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 300 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 300 V.
Інші пропозиції SF35G за ціною від 10.69 грн до 41.07 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SF35G | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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SF35G | Виробник : Taiwan Semiconductor | Rectifiers 35ns, 3A, 300V, Super Fast Recovery Rectifier |
на замовлення 2490 шт: термін постачання 105-114 дні (днів) |
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SF35G | Виробник : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 35ns Kind of package: tape Max. forward voltage: 1.3V Case: DO201AD Load current: 3A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 125A Mounting: THT Max. off-state voltage: 300V Type of diode: rectifying Features of semiconductor devices: glass passivated; superfast switching кількість в упаковці: 5 шт |
товар відсутній |
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SF35G | Виробник : YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 3A; tape; Ifsm: 125A; DO201AD; 35ns Kind of package: tape Max. forward voltage: 1.3V Case: DO201AD Load current: 3A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 125A Mounting: THT Max. off-state voltage: 300V Type of diode: rectifying Features of semiconductor devices: glass passivated; superfast switching |
товар відсутній |