SFT1440-E onsemi
Виробник: onsemiDescription: MOSFET N-CH 600V 1.5A TP
Packaging: Bag
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 8.1Ohm @ 800mA, 10V
Power Dissipation (Max): 1W (Ta), 20W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 30 V
на замовлення 104482 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 720+ | 28.63 грн |
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Технічний опис SFT1440-E onsemi
Description: MOSFET N-CH 600V 1.5A TP, Packaging: Bag, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 8.1Ohm @ 800mA, 10V, Power Dissipation (Max): 1W (Ta), 20W (Tc), Supplier Device Package: IPAK/TP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 30 V.
Інші пропозиції SFT1440-E за ціною від 39.94 грн до 39.94 грн
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ | ||||
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SFT1440-E | Виробник : ONSEMI |
Description: ONSEMI - SFT1440-E - SFT1440-E, SINGLE MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 104482 шт: термін постачання 21-31 дні (днів) |
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SFT1440-E | Виробник : onsemi |
Description: MOSFET N-CH 600V 1.5A TP Packaging: Bag Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 8.1Ohm @ 800mA, 10V Power Dissipation (Max): 1W (Ta), 20W (Tc) Supplier Device Package: IPAK/TP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 30 V |
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