SGW50N60HSFKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IGBT 600V 100A 416W TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 96+ | 211.93 грн |
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Технічний опис SGW50N60HSFKSA1 Infineon Technologies
Description: IGBT 600V 100A 416W TO247-3, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 47ns/310ns, Switching Energy: 1.96mJ, Test Condition: 400V, 50A, 6.8Ohm, 15V, Gate Charge: 179 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 416 W.
Інші пропозиції SGW50N60HSFKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SGW50N60HSFKSA1 | Виробник : Infineon Technologies |
Trans IGBT Chip N-CH 600V 100A 416000mW 3-Pin(3+Tab) TO-247 Tube |
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SGW50N60HSFKSA1 | Виробник : Infineon Technologies |
Description: IGBT 600V 100A 416W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 47ns/310ns Switching Energy: 1.96mJ Test Condition: 400V, 50A, 6.8Ohm, 15V Gate Charge: 179 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 416 W |
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| SGW50N60HSFKSA1 | Виробник : Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
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