SIZ902DT-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 66W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
на замовлення 2922 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 96.29 грн |
| 10+ | 75.97 грн |
| 100+ | 59.08 грн |
| 500+ | 47 грн |
| 1000+ | 38.29 грн |
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Технічний опис SIZ902DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 29W, 66W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 16A, Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5).
Інші пропозиції SIZ902DT-T1-GE3 за ціною від 39.92 грн до 103.07 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
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SIZ902DT-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5 |
на замовлення 2734 шт: термін постачання 21-30 дні (днів) |
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| SIZ902DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W Type of transistor: N-MOSFET x2 Mounting: SMD Kind of package: reel; tape Power dissipation: 29/66W On-state resistance: 14.5/8.3mΩ Polarisation: unipolar Technology: TrenchFET® Gate charge: 21/65nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50...80A Drain current: 16A кількість в упаковці: 3000 шт |
товар відсутній |
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SIZ902DT-T1-GE3 | Виробник : Vishay |
Trans MOSFET N-CH 30V 14.3A/16A 8-Pin PowerPAIR T/R |
товар відсутній |
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SIZ902DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 66W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товар відсутній |
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| SIZ902DT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 16A; 29/66W Type of transistor: N-MOSFET x2 Mounting: SMD Kind of package: reel; tape Power dissipation: 29/66W On-state resistance: 14.5/8.3mΩ Polarisation: unipolar Technology: TrenchFET® Gate charge: 21/65nC Drain-source voltage: 30V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50...80A Drain current: 16A |
товар відсутній |