SIZF916DT-T1-GE3 Vishay Siliconix
Виробник: Vishay SiliconixDescription: MOSFET N-CH DUAL 30V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V
Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
на замовлення 922 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.84 грн |
| 10+ | 101.3 грн |
| 100+ | 78.96 грн |
| 500+ | 61.21 грн |
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Технічний опис SIZF916DT-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH DUAL 30V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V, Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5), Part Status: Active.
Інші пропозиції SIZF916DT-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SIZF916DT-T1-GE3 | Виробник : VISHAY |
SIZF916DT-T1-GE3 Multi channel transistors |
товар відсутній |
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SIZF916DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH DUAL 30V Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 15V, 4320pF @ 15V Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 95nC @ 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
товар відсутній |
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SIZF916DT-T1-GE3 | Виробник : Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5F |
товар відсутній |