SKDH146/12-L105 07916710 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Mechanical mounting: screw
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 315A
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Case: SEMIPONT6
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Application: for UPS; frequency changer; Inverter; photovoltaics
Mechanical mounting: screw
Semiconductor structure: diode/thyristor/IGBT
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 315A
Electrical mounting: Press-in PCB
Type of module: IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Case: SEMIPONT6
Max. off-state voltage: 1.2kV
кількість в упаковці: 1 шт
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Технічний опис SKDH146/12-L105 07916710 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV, Application: for UPS; frequency changer; Inverter; photovoltaics, Mechanical mounting: screw, Semiconductor structure: diode/thyristor/IGBT, Gate-emitter voltage: ±20V, Collector current: 80A, Pulsed collector current: 315A, Electrical mounting: Press-in PCB, Type of module: IGBT, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, Case: SEMIPONT6, Max. off-state voltage: 1.2kV, кількість в упаковці: 1 шт.
Інші пропозиції SKDH146/12-L105 07916710
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SKDH146/12-L105 07916710 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Application: for UPS; frequency changer; Inverter; photovoltaics Mechanical mounting: screw Semiconductor structure: diode/thyristor/IGBT Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 315A Electrical mounting: Press-in PCB Type of module: IGBT Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Case: SEMIPONT6 Max. off-state voltage: 1.2kV |
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