SKIIP 38GB12E4V1 M20 025241219 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 900A
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Case: MiniSKiiP® 3
кількість в упаковці: 1 шт
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Технічний опис SKIIP 38GB12E4V1 M20 025241219 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 300A, Pulsed collector current: 900A, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: Press-Fit, Mechanical mounting: screw, Type of module: IGBT, Topology: IGBT half-bridge; NTC thermistor, Case: MiniSKiiP® 3, кількість в упаковці: 1 шт.
Інші пропозиції SKIIP 38GB12E4V1 M20 025241219
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SKIIP 38GB12E4V1 M20 025241219 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 900A Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: Press-Fit Mechanical mounting: screw Type of module: IGBT Topology: IGBT half-bridge; NTC thermistor Case: MiniSKiiP® 3 |
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