SKM150GAL12F4G 22896150 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSSCategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 300A
кількість в упаковці: 1 шт
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Технічний опис SKM150GAL12F4G 22896150 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw, Case: SEMITRANS3, Application: for UPS; frequency changer; Inverter; photovoltaics, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: boost chopper, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 150A, Pulsed collector current: 300A, кількість в упаковці: 1 шт.
Інші пропозиції SKM150GAL12F4G 22896150
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| SKM150GAL12F4G 22896150 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Case: SEMITRANS3 Application: for UPS; frequency changer; Inverter; photovoltaics Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 150A Pulsed collector current: 300A |
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