Технічний опис SPA20N60CFDXKSA1 Infineon Technologies
Description: MOSFET N-CH 600V 20.7A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PG-TO220-3-31, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Інші пропозиції SPA20N60CFDXKSA1
| Фото | Назва | Виробник | Інформація |
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SPA20N60CFDXKSA1 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 35W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 500 шт |
товар відсутній |
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SPA20N60CFDXKSA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 20.7A TO220-FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: PG-TO220-3-31 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
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SPA20N60CFDXKSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 35W; PG-TO220-3-FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.1A Power dissipation: 35W Case: PG-TO220-3-FP Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhanced |
товар відсутній |