SPU02N60S5BKMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 600V 1.8A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO251-3-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 4117 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 434+ | 45.78 грн |
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Технічний опис SPU02N60S5BKMA1 Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO251-3, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 80µA, Supplier Device Package: PG-TO251-3-21, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Інші пропозиції SPU02N60S5BKMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SPU02N60S5BKMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251 Tube |
товар відсутній |
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SPU02N60S5BKMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 600V 1.8A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 80µA Supplier Device Package: PG-TO251-3-21 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
товар відсутній |