STGB10M65DF2 STMICROELECTRONICS
Виробник: STMICROELECTRONICSDescription: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s)
tariffCode: 85412900
Transistormontage: Oberflächenmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.55V
MSL: -
usEccn: EAR99
euEccn: NLR
Verlustleistung: 115W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 175°C
Kontinuierlicher Kollektorstrom: 20A
SVHC: No SVHC (17-Dec-2015)
на замовлення 639 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 90.91 грн |
| 500+ | 76.8 грн |
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Технічний опис STGB10M65DF2 STMICROELECTRONICS
Description: IGBT 650V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 96 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 19ns/91ns, Switching Energy: 120µJ (on), 270µJ (off), Test Condition: 400V, 10A, 22Ohm, 15V, Gate Charge: 28 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 115 W.
Інші пропозиції STGB10M65DF2 за ціною від 73.56 грн до 168.41 грн
| Фото | Назва | Виробник | Інформація |
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STGB10M65DF2 | Виробник : STMicroelectronics |
Description: IGBT 650V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 96 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/91ns Switching Energy: 120µJ (on), 270µJ (off) Test Condition: 400V, 10A, 22Ohm, 15V Gate Charge: 28 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
на замовлення 820 шт: термін постачання 21-31 дні (днів) |
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STGB10M65DF2 | Виробник : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STGB10M65DF2 - IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263 (D2PAK), 3 Pin(s) tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.55V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 115W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 20A SVHC: No SVHC (17-Dec-2015) |
на замовлення 639 шт: термін постачання 21-31 дні (днів) |
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STGB10M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 20A 115000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STGB10M65DF2 | Виробник : STMicroelectronics |
Trans IGBT Chip N-CH 650V 20A 115mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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| STGB10M65DF2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
товар відсутній |
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STGB10M65DF2 | Виробник : STMicroelectronics |
Description: IGBT 650V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 96 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/91ns Switching Energy: 120µJ (on), 270µJ (off) Test Condition: 400V, 10A, 22Ohm, 15V Gate Charge: 28 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
товар відсутній |
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STGB10M65DF2 | Виробник : STMicroelectronics |
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 10 A low loss |
товар відсутній |
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| STGB10M65DF2 | Виробник : STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 10A; 115W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 115W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode |
товар відсутній |