STH22N95K5-2AG STMicroelectronics
Виробник: STMicroelectronicsTrans MOSFET N-CH 950V 17.5A Automotive AEC-Q101 3-Pin(2+Tab) H2PAK T/R
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис STH22N95K5-2AG STMicroelectronics
Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: H2Pak-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 100 V, Qualification: AEC-Q101.
Інші пропозиції STH22N95K5-2AG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STH22N95K5-2AG | Виробник : STMicroelectronics |
Trans MOSFET N-CH 950V 17.5A Automotive 3-Pin(2+Tab) H2PAK T/R |
товар відсутній |
|
 |
STH22N95K5-2AG | Виробник : STMicroelectronics |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 100 V Qualification: AEC-Q101 |
товар відсутній |
|
|
|
STH22N95K5-2AG | Виробник : STMicroelectronics |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 100 V Qualification: AEC-Q101 |
товар відсутній |
|
 |
STH22N95K5-2AG | Виробник : STMicroelectronics |
MOSFET Automotive-grade N-channel 950 V, 280 mOhm typ 17.5 A MDmesh K5 Power MOSFET |
товар відсутній |