STH320N4F6-2 STMicroelectronics
Виробник: STMicroelectronicsDescription: MOSFET N-CH 40V 200A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H²PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 233 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 327.66 грн |
| 10+ | 264.94 грн |
| 100+ | 214.31 грн |
Відгуки про товар
Написати відгук
Технічний опис STH320N4F6-2 STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: H²PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції STH320N4F6-2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STH320N4F6-2 | Виробник : STMicroelectronics |
MOSFET N-CH 40V 11mOhm typ 200A STripFET |
на замовлення 954 шт: термін постачання 21-30 дні (днів) |
|
 |
STH320N4F6-2 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 40V 200A Automotive 3-Pin(2+Tab) H2PAK T/R |
товар відсутній |
|
|
|
STH320N4F6-2 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 40V 200A H2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H²PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |