STH52N10LF3-2AG

STH52N10LF3-2AG STMicroelectronics


sth52n10lf3-2ag.pdf Виробник: STMicroelectronics
Trans MOSFET N-CH 100V 52A Automotive 3-Pin(2+Tab) H2PAK T/R
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Технічний опис STH52N10LF3-2AG STMicroelectronics

Description: MOSFET N-CH 100V 52A H2PAK-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 26A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: H2Pak-2, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V.

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STH52N10LF3-2AG STH52N10LF3-2AG Виробник : STMicroelectronics Description: MOSFET N-CH 100V 52A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 26A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: H2Pak-2
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 400 V
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STH52N10LF3-2AG Виробник : STMicroelectronics sth52n10lf3-2ag-1500975.pdf MOSFET Automotive-grade N-channel 100 V, 15 mOhm typ., 52 A STripFET F3 Power MOSFET in an H2PAK-2 package
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