STU7N105K5 STMicroelectronics
Виробник: STMicroelectronicsDescription: MOSFET N-CH 1050V 4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1050 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 202.63 грн |
| 10+ | 175.2 грн |
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Технічний опис STU7N105K5 STMicroelectronics
Description: MOSFET N-CH 1050V 4A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: IPAK (TO-251), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1050 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V.
Інші пропозиції STU7N105K5 за ціною від 91 грн до 219.32 грн
| Фото | Назва | Виробник | Інформація |
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STU7N105K5 | Виробник : STMicroelectronics |
MOSFET N-channel 1050 V, 1.4 Ohm typ 4 A MDmesh K5 Power MOSFETs in an IPAK package |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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| STU7N105K5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 110W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 110W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| STU7N105K5 | Виробник : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.05kV; 4A; Idm: 16A; 110W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.05kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 110W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |