Технічний опис TD425N18KOFHPSA2 Infineon Technologies
Description: SCR MODULE 1800V 800A MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: 125°C (TJ), Structure: Series Connection - SCR/Diode, Current - Hold (Ih) (Max): 300 mA, Current - Gate Trigger (Igt) (Max): 250 mA, Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz, Number of SCRs, Diodes: 1 SCR, 1 Diode, Current - On State (It (AV)) (Max): 471 A, Voltage - Gate Trigger (Vgt) (Max): 1.5 V, Part Status: Active, Current - On State (It (RMS)) (Max): 800 A, Voltage - Off State: 1.8 kV.
Інші пропозиції TD425N18KOFHPSA2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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TD425N18KOFHPSA2 | Виробник : Infineon Technologies |
 SCR Module Diode 1800V 800A(RMS) 14500A 5-Pin PB60AT-1 Tray |
товар відсутній |
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TD425N18KOFHPSA2 | Виробник : INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 425A; BG-PB60AT-1; Ufmax: 1.5V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 425A Max. load current: 800A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw кількість в упаковці: 1 шт |
товар відсутній |
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TD425N18KOFHPSA2 | Виробник : Infineon Technologies |
Description: SCR MODULE 1800V 800A MODULE Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 125°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 471 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 800 A Voltage - Off State: 1.8 kV |
товар відсутній |
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TD425N18KOFHPSA2 | Виробник : INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 425A; BG-PB60AT-1; Ufmax: 1.5V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 425A Max. load current: 800A Case: BG-PB60AT-1 Max. forward voltage: 1.5V Max. forward impulse current: 14.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товар відсутній |