Технічний опис TJ9A10M3,S4Q Toshiba
Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Drain current: -9A, Power dissipation: 19W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 0.12Ω, Mounting: THT, Gate charge: 47nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1000 шт.
Інші пропозиції TJ9A10M3,S4Q
| Фото | Назва | Виробник | Інформація |
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TJ9A10M3,S4Q | Виробник : TOSHIBA |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -9A Power dissipation: 19W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1000 шт |
товар відсутній |
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TJ9A10M3,S4Q | Виробник : TOSHIBA |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -9A; 19W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -9A Power dissipation: 19W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |