Технічний опис TK62J60W,S1VQ(O Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 61.8A, Power dissipation: 400W, Case: TO3PN, Gate-source voltage: ±30V, On-state resistance: 40mΩ, Mounting: THT, Gate charge: 180nC, Kind of package: tube, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції TK62J60W,S1VQ(O
| Фото | Назва | Виробник | Інформація |
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TK62J60W,S1VQ(O | Виробник : Toshiba |
 Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-3PN |
товар відсутній |
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TK62J60W,S1VQ(O | Виробник : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Power dissipation: 400W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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TK62J60W,S1VQ(O | Виробник : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; 400W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61.8A Power dissipation: 400W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |